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PTF 10107 5 Watts, 2.0 GHz GOLDMOS (R) Field Effect Transistor
Description
The PTF 10107 is a 5-watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability
* * * * *
Typical Output Power & Efficiency vs. Input Power
8 100 Output Pow er Efficiency 60 Efficiency (%) X 80
Output Power (Watts)
7 6 5 4 3 2 1 0 0.0
A-1
101 234 07 569
845
VDD = 26 V IDQ = 70 mA f = 2.0 GHz
0.1 0.2 0.3 0.4
40 20 0 0.5
Input Power (Watts)
Package 20244
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 26 V, POUT = 1 W, IDQ = 70 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 70 mA, f = 1.99 GHz) Drain Efficiency (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps P-1dB hD Y
Min
11 5 40 --
Typ
-- 6.5 -- --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10107
Electrical Characteristics
Characteristic
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance (100% Tested)
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Conditions
VGS = 0 V, ID = 20 mA VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
-- -- -- 0.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 39 0.22 -40 to +150 4.5
Unit
Vdc Vdc C Watts W/C C C/W
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
15 Gain & Output Power x 13 11 9 7 5 1750 Output Pow er 1800 1850 1900 1950 2000 Gain (dB) Efficiency (%) 65 55 14 Gain (dB) 12 50 Efficiency (%) 40 - 30 5 -15 20 10 -25 Return Loss (dB) 2 1925 1950 1975 0 -35 2000
Broadband Test Fixture Performance
Efficiency Return Loss
60
Efficiency
Gain
45 35 25 15 2050
10 8 6 4
VDD = 26 V IDQ = 70 mA
VCC = 26 V IDQ = 70 mA POUT = 4 W
Frequency (MHz)
Frequency (MHz)
2
e
Output Power vs. Supply Voltage
10
0 -10
PTF 10107
Intermodulation Distortion vs. Output Power
VDD = 26 V IDQ = 70 mA f1 = 1999.9 MHz f2 = 2000.0 MHz
IM3 IM5 IM7
Output Power (Watts)
8 6 4 2 0 22 24 26 28 30
IMD (dBc)
-20 -30 -40 -50 -60 -70 0
IDQ = 70 mA f = 2.0 GHz
1
2
3
4
5
6
7
Supply Voltage (Volts)
Output Power (Watts-PEP)
Power Gain vs. Output Power
14 13
Capacitance vs. Supply Voltage
18 6 15 12 9
IDQ = 70 mA IDQ = 40 mA
Cds and Cgs (pF) x Cgs Cds
Power Gain (dB)
VGS = 0 V f = 1 MHz
5
11 10 9 8 0.1 1.0 10.0
3 2
IDQ = 20 mA
VDD = 26 V f = 2.0 GHz
6 3 0 0 10 20 30 40
Crss
1 0
Output Power (Watts)
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1 0.99 0.98 0.97 0.96 -20 30 Temp. (C) 80 130
0.05 0.145 0.24 0.335 0.43 0.525
Voltage normalized to 1.0 V Series show current (A)
3
Crss (pF)
12
4
PTF 10107
Impedance Data
VDD = 26 V, POUT = 5 W, IDQ = 70 mA
D
e
Z0 = 50 W
Z Source
Z Load
G S
Frequency
GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R
Z Source W
jX -1.7 -2.0 -2.4 -3.1 -3.8 -4.1 -4.6 R 3.2 3.4 3.4 3.7 3.5 3.0 2.7
Z Load W
jX 2.4 1.7 0.9 0.5 0.0 -0.4 -0.8 6.20 6.80 7.10 7.05 7.00 6.70 6.00
Typical Scattering Parameters
(VDS = 26 V, ID = 300 mA)
f (MHz)
100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200
S11 Mag
0.874 0.837 0.844 0.850 0.858 0.864 0.868 0.870 0.879 0.887 0.898 0.905 0.911 0.914 0.916 0.918 0.923 0.928 0.933 0.937 0.935 0.934
S21 Ang
-58 -70 -100 -118 -130 -139 -146 -153 -158 -162 -167 -171 -174 -178 179 176 173 171 168 165 162 159
S12 Ang
137 129 106 89 77 66 56 48 40 33 26 20 14 8 2 -3 -8 -13 -18 -23 -28 -33 4
S22 Ang
46 37 21 9 -1 -8 -13 -15 -13 -2 19 48 66 74 77 79 79 78 76 74 71 68
Mag
24.1 21.8 17.5 14.1 11.5 9.44 7.86 6.61 5.65 4.86 4.24 3.73 3.30 2.92 2.61 2.35 2.14 1.95 1.79 1.65 1.53 1.43
Mag
0.009 0.010 0.012 0.013 0.012 0.011 0.009 0.008 0.006 0.004 0.004 0.004 0.005 0.006 0.008 0.009 0.011 0.013 0.015 0.017 0.018 0.020
Mag
0.770 0.737 0.710 0.709 0.723 0.749 0.767 0.782 0.801 0.815 0.837 0.854 0.870 0.882 0.892 0.898 0.907 0.914 0.920 0.925 0.929 0.934
Ang
-35 -42 -62 -77 -88 -98 -108 -116 -123 -130 -136 -141 -147 -152 -156 -160 -164 -168 -172 -176 -179 178
e
Test Circuit
PTF 10107
Block Diagram for f = 1.96 GHz DUT PTF 10107 l1 0.303 l 1.99 GHz l2 0.146 l 1.99 GHz l3 0.076 l 1.99 GHz l4 0.072 l 1.99 GHz l5 0.060 l 1.99 GHz l6 0.352 l 1.99 GHz LDMOS RF FET Microstrip 50 W Microstrip 11.6 W Microstrip 17.7 W Microstrip 13.5 W Microstrip 17.7 W Microstrip 50 W C1 C2, C3, C6, C9 C4, C10 C5 C7 C8 J1, J2 L1 L2 R1, R2 Circuit Board Capacitor, 0.1 F Digi-Key P4525-ND Capacitor, 33 pF ATC 100 B Capacitor, 0.5 pF ATC 100 B Capacitor, 1.1 pF ATC 100 B Capacitor, 0.1 F 50 V Digi-Key Capacitor, 100 F, 50 V Digi-Key P5182-ND Connector, SMA, Female, Panel Mount Chip Inductor, 2.7 H Digi-Key LL2012-F2N7K 3 Turns, 20 AWG, .120 I. D. N/A Resistor, 220 ohm, 1/4W Digi-Key QBK-ND 0.031" Thick, er = 4.0, 2 0z copper, G200 AlliedSignal
5
PTF 10107
e
Artwork (not to scale)
Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 1998, 1999, 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 10107 Uen Rev. B 01-04-01
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